- The structure of VECEL epi-wafer consists of gain media cavity sandwiched with both P-type and N-type Bragg reflectors that have different refractivity values each other to create full mirrors at the bottom and partial mirrors at the top.
- The VECEL epi-wafer has more than 300 layers of various thin compound semiconductor materials and requires a leading edge crystal growth technology of compound semiconductors with an atomic level accuracy for controlling the desires material composition and thickness of layers in order to have the best electric and optical characteristics of VECEL chips.
- The VECEL epi-wafer determines the most of VECEL chip performances.
- Development and production of the VECEL epi-wafer require to fulfill extensive qualification requirements and have very high barriers to entry.
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