中文|English

PRODUCTS

PRODUCTS

01

940nm High Power VCSEL Epi Wafer (Conventional Technology)

Mass Production on May 2019

  • Low threshold current
  • low beam divergence
  • High power conversion efficiency
  • High reliability
  • Suitable for the fabrication of both single emitter and multiple emitter array

02

850nm VCSEL Epi Wafer

Mass Production on September 2019

  • Low threshold current
  • low beam divergence
  • High power conversion efficiency
  • High speed of > 10GHz for single emitter chip
  • Suitable for the fabrication of both single emitter and multiple emitter array

03

940nm High Power VCSEL Epi Wafer (Proprietary Technology)

Mass Production on December 2019

  • High oxidation process yield on wafer and batch-to-batch

  • High throughput oxidation process-batch process capability for oxidation

  • Very high reliability

  • Suitable for both fabrication of both single emitter and multiple emitter array

  • Best candidate for the high power single emitter



04

Possible to supply customer designed AIGaAs and InGaAIP based epi wafers

All products are produced by state of art MOCVD(metal organic vapor deposition) process.

  • Phone:+86 21 62781056
  • E-mail:shishenhui@ascore-tech.com
  • Address:Room 1610, No. 2 Building, Yinghua Plaza, No. 2899 Guangfu West Rd., Shanghai
  • Zip:200062

Shanghai Ascore Technology Co., Ltd. © 2019 . 沪ICP备19002169号-1